NEC and NEC Electronics Develop High Threshold Voltage Control Gallium Nitride (GaN) Power Transistor on a Silicon (Si)

  Tokyo, Dec 10, 2009 - (JCN Newswire) - NEC Corporation (NEC) and NEC Electronics Corporation (NECEL) today announced the development of a nitride semiconductor(1) power transistor on a silicon (Si) substrate that has improved the control and suppression of electrical currents when electrical power is turned off (normally-off characteristics(2)), a necessary feature for the safe operation of consumer electronics and IT devices.  

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