Showa Denko Achieves Very High Surface Smoothness in SiC Epitaxial Wafers; for Use in New Inverters for Electric Vehicle

  Tokyo, Dec 8, 2009 - (JCN Newswire) - Showa Denko K.K. (SDK) has achieved very high smoothness (0.4 nm in roughness) all over the surface of its largest-size four-inch silicon carbide (SiC) epitaxial wafers on a commercial production basis. SiC epitaxial wafers are produced by forming a thin layer of single-crystal SiC on the surface of SiC bulk wafers. SDK started production and sale of SiC epitaxial wafers in January this year.  

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